- Persamaan Transistor D965 Circuit
- Data Persamaan Transistor
- Persamaan Transistor D965 High Voltage
- Buku Persamaan Transistor
Persamaan transistor MOSFET 9NK60 – 8N60 – 7N65 – 7N60 Persamaan transistor MOSFET yang mesti kita ketahui,karena berhubung banyak nya jenis jadi kita bias mengusahakan membeli stok alat transistor dan mosfet dengan jenis yang bias dipakai ke setiap power suplay / Ac matic yang kita perbaiki. How to choose a replacement for a bipolar transistor TOTAL: 124472 transistors. LIST Last Update. BJT: UM8168L TIP36AT TIP36AB TIP35AT TIP35AB TIP127B.
Type Designator: D965
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 42 V
Maximum Collector-Emitter Voltage |Vce|: 22 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN: 340
Noise Figure, dB: -
Package: TO92
D965 Transistor Equivalent Substitute - Cross-Reference Search
D965 Datasheet (PDF)
0.1. d965-t.pdf Size:229K _mcc
MCC Micro Commercial Components TM D965-T 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 D965-R Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN • Power Dissipation: PCM=0.75W @ Tamb=25 • Collector Current: ICM=5A Plastic-Encapsulate • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Transistors • Marking: D965T/R
0.2. d965-r.pdf Size:229K _mcc
MCC Micro Commercial Components TM D965-T 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 D965-R Phone: (818) 701-4933 Fax: (818) 701-4939 Features NPN • Power Dissipation: PCM=0.75W @ Tamb=25 • Collector Current: ICM=5A Plastic-Encapsulate • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 Transistors • Marking: D965T/R
0.3. 2sd965 e.pdf Size:43K _panasonic
Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Absolute Maximum Ratings (Ta=25ËšC) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 –0.1 0.45 â€
0.4. 2sd965.pdf Size:39K _panasonic
Persamaan Transistor D965 Circuit
Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification Unit: mm For stroboscope 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances at high efficiency with the low-voltage power supply. Absolute Maximum Ratings (Ta=25ËšC) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 –0.1 0.45 â€
Select regions in the Tracks area To perform some edits on regions, you must first select the regions. You can select one or multiple regions, select regions on different tracks, and quickly select muted regions, overlapped regions, or regions meeting other criteria. Selected regions appear brighter in the Tracks area than unselected regions. Regions are the building blocks of a GarageBand song. When you record a Touch Instrument, use the Drummer or add Apple Loops to a song, a region appears in the instrument’s track in Tracks view. There are three types of region: Regions from Audio Recorder. 
Cut and paste regions in GarageBand on Mac You can cut or copy regions in the Tracks area, and paste them at a different position. You can also paste a copied region at the same time position, to quickly double the region for use on another track. Selecting regions: Click a region to select it, and Shift-click to select multiple regions. You can also select multiple regions at a time by dragging an imaginary selection rectangle around all the regions you want to select. Select regions in GarageBand on Mac To perform some edits on regions, you must first select the regions. You can select one or multiple regions, select regions on different tracks, and quickly select muted regions, overlapped regions, or regions meeting other criteria. Selected regions appear brighter in the Tracks area than unselected regions.
0.5. 2sd965.pdf Size:18K _utc
UTC 2SD965 NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES *Collector current up to 5A * Collector-Emitter voltage up to 20 V APPLICATIONS 1 * Audio amplifier * Flash unit of camera * Switching circuit TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base
0.6. d965ss.pdf Size:189K _utc
UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Order Number P
0.7. d965ass.pdf Size:189K _utc
UNISONIC TECHNOLOGIES CO., LTD D965SS / D965ASS NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * D965SS : Collector-Emitter voltage up to 20 V * D965ASS : Collector-Emitter voltage up to 30 V APPLICATIONS * Audio amplifier * Flash unit of camera * Switching circuit ORDERING INFORMATION Order Number P
0.8. 2sd965a.pdf Size:101K _secos
2SD965A 5 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C†specifies halogen & lead-free SOT-89 FEATURES 4 ï‚ Audio amplifier 1 ï‚ Flasg unit of camera 2 3 A ï‚ Switching circuit E C B C E B D CLASSIFICATION OF hFE(2) Rank Q R S F G 230 - 380 Range 340 - 600 560 - 800 H K J L Milli
0.9. d965.pdf Size:272K _secos
D965 NPN General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C†specifies halogen and lead free FEATURES TO-92 ï¬ Audio amplifier G H ïªEmitter ï¬ Flash unit of camera ï«Collector ï¬ Switching circuit ï¬Base J A D CLASSIFICATION OF hFE(2) Millimeter REF. B Min. Max. A 4.40 4.70 Rank R T V B 4.30 4.70 K C 12.70 - R
0.10. cd965.pdf Size:223K _cdil
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CD965 TO-92 Plastic Package B C E For Low Frequency Power Amplification ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNITS VCEO Collector Emitter Voltage 20 V VCBO Collector Base Voltage 40 V VEBO Emitter Base Voltage 7 V IC Collector Current
0.11. d965v.pdf Size:110K _jiangsu
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 D965V TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR General Purpose Switching and Amplification. 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 22 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base
0.12. 2sd965.pdf Size:335K _htsemi
2SD965 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current 3. EMITTER Mini Power Type Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 7 V
0.13. 2sd965a.pdf Size:555K _htsemi
 2SD 965A TRANSISTOR (NPN) FEATURES SOT-89 Audio amplifier Flash unit of camera 1. BASE Switching circuit MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. COLLECTOR 1 Symbol Parameter Value Units 2 3. EMITTER VCBO Collector-Base Voltage 40 V 3 Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 7 V IC Collector Current -Continuous 5 A C
0.14. 2sd965a.pdf Size:206K _lge
 2SD965A SOT-89 Transistor(NPN) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 1.4 1.4 3. EMITTER 3 2.6 4.25 2.4 3.75 Features 0.8 Audio amplifier MIN 0.53 0.40 0.48 0.44 Flash unit of camera 2x) 0.13 B 0.35 0.37 1.5 Switching circuit 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter
0.15. d965.pdf Size:163K _lge
 D965(NPN) TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Audio amplifier Flash unit of camera Switching circuit MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 42 V VCEO Collector-Emitter Voltage 22 V VEBO Emitter-Base Voltage 6 V IC Collect
0.16. 2sd965.pdf Size:828K _wietron
WEITRON 2SD965 NPN Transistor COLLECTOR 2. P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE FEATURES : 1. EMITTER TO-92 * Flash unit of camera * Switching circuit MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 42 V Collector-Emitter Voltage VCEO 22 V Emitter-Base Voltage VEBO 6 V Collector Current -Continu
0.17. hsd965.pdf Size:47K _hsmc
Spec. No. : HE6537 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2004.11.30 MICROELECTRONICS CORP. Page No. : 1/4 HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD965 is suited for use as AF output amplifier and flash unit. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ..................................
0.18. 2sd965a.pdf Size:250K _shenzhen
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-89 Plastic-Encapsulate Transistors SOT-89 2SD965A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Audio amplifier 1 Flash unit of camera 2 3. EMITTER Switching circuit 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 40 V Collector-Emitter V
0.19. btd965a3.pdf Size:236K _cystek
Spec. No. : C847A3 Issued Date : 2003.04.01 CYStech Electronics Corp. Revised Date :2011.02.14 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 20V IC 5A BTD965A3 RCESAT(typ) 0.12Ω Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386A3 • Pb-free package
0.20. btd965la3.pdf Size:140K _cystek
Spec. No. : C852A3 Issued Date : 2004.07.02 CYStech Electronics Corp. Revised Date : 2007.04.18 Page No. : 1/5 Low VCE(sat) NPN Planar Transistor BTD965LA3 Features • High current capability • Low collector-to-emitter saturation voltage • High allowable power dissipation • Pb-free package Applications • Relay drivers, lamp drivers, motor drivers, strobes Sy
0.21. btd965n3.pdf Size:246K _cystek
Spec. No. : C847N3 Issued Date : 2003.07.02 CYStech Electronics Corp. Revised Date :2013.01.03 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD965N3 Features • Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A • Excellent DC current gain characteristics • Complementary to BTB1386N3 Symbol Outline BTD965N3 SOT-23 B：Base C：Collector
0.22. 2sd965t.pdf Size:1165K _blue-rocket-elect
2SD965T(BR3DG965T) Rev.C Feb.-2015 DATA SHEET æè¿° / Descriptions SOT-89 å¡‘å°å°è£… NPN åŠå¯¼ä½“三æžç®¡ã€‚Silicon NPN transistor in a SOT-89 Plastic Package. ç‰¹å¾ / Features 饱和压é™ä½Ž,高性能。 Low VCE(sat),high performance. 用途 / Applications 用于音频输出放大。 Audio frequency output amplifier. 内部ç‰æ•ˆç”µè·¯ / Equivalent Circuit 引脚æ
0.23. hd965.pdf Size:260K _shantou-huashan
N PN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HD965 â–ˆ LOW FREQUENCY AMPLIFIER APPLICATIONS. â–ˆ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 Tstg——Storage Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯ -55~150℃ Tj——Junction Temperature⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯⋯150℃ PC——Collector Dissipation⋯⋯⋯⋯⋯⋯⋯⋯â‹
0.24. 2sd965k.pdf Size:124K _tysemi
SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors Product specification 2SD965K Features Low collector-emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the lowvoltage power supply. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V C
0.25. 2sd965-q.pdf Size:176K _tysemi
Product specification 2SD965-Q Unit:mm SOT-89 1.50 ±0.1 4.50±0.1 1.80±0.1 ■Features ◠Low collector-emitter saturation voltage VCE(sat) ◠Satisfactory operation performances at high efficiency with 1 2 3 the low-voltage power supply. 0.44±0.1 0.48±0.1 0.53±0.1 3.00±0.1 1.Base 2.Collector 3.Emitter ■Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating
0.26. 2sd965.pdf Size:1219K _kexin
Data Persamaan Transistor
SMD Type Transistors NPN Transistors 2SD965 1.70 0.1 ■Features ◠Low Collector-Emitter Saturation Voltage ◠Large Collector Power Dissipation and Current ◠Mini Power Type Package 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V
Persamaan Transistor D965 High Voltage
0.27. 2sd965a.pdf Size:321K _kexin
SMD Type Transistors NPN Transistors 2SD965A 1.70 0.1 ■Features ◠Audio amplifier ◠Flash unit of camera ◠Switching circuit 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 7 Collector Current - C
0.28. gst2sd965.pdf Size:382K _globaltech_semi
GST2SD965 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 22V amplifier and switch. Collector Current : 5A Lead(Pb)-Free Packages & Pin Assignments TO-92 Pin Description 1 Emitter 2 Collector 3 Base Marking Information P/N Package Rank Part Marking GST2SD965F TO-92 (R) / (T) / (V)
Datasheet: 3DD13001, 3DD13003B, 8050SST, 8550SST, B772S, C1815T, C945T, D882S, TIP31, EMT1, M28ST, M8050T, M8550T, MMBT2907FW, MMBT3904FW, MMBT3904Z, MMBT3906FW.
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